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November 2013
FDD7N60NZ / FDU7N60NZTU
N-Channel UniFET TM II MOSFET
600 V, 5.5 A, 1.25 Ω
Features
? R DS(on) = 1.05 Ω (Typ.) @ V GS = 10 V, I D = 2.75 A
? Low Gate Charge (Typ. 13 nC)
? Low C rss (Typ. 7 pF)
? 100% Avalanche Tested
? Improved dv/dt Capability
? ESD Improved Capability
? RoHS Compliant
Applications
Description
UniFET TM II MOSFET is Fairchild Semiconductor ’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest on-
state resistance among the planar MOSFET, and also provides
superior switching performance and higher avalanche energy
strength. In addition, internal gate-source ESD diode allows
UniFET TM II MOSFET to withstand over 2kV HBM surge stress.
This device family is suitable for switching power converter appli-
cations such as power factor correction (PFC), flat panel display
(FPD) TV power, ATX and electronic lamp ballasts.
? Lighting
? Uninterruptible Power Supply
D
D
G
S
D-PAK
G
D
S
I-PAK
G
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FDD7N60NZTM/
FDU7N60NZTU
600
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
±25
5.5
3.3
V
A
I DM
Drain Current
- Pulsed
(Note 1)
22
A
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
347
5.5
12.5
10
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 o C)
- Derate Above 25 o C
90
0.7
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
o
o
C
C
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDD7N60NZTM/
FDU7N60NZTU
1.4
90
Unit
o C/W
?2011 Fairchild Semiconductor Corporation
FDD7N60NZ / FDU7N60NZTU Rev. C1
1
www.fairchildsemi.com
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